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SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION FEATURES
High Voltage : VCEO=160V. Large Continuous Collector Current Capability. Recommended for LED Drive Application.
A H
KTC4380
EPITAXIAL PLANAR NPN TRANSISTOR
C
G
D K F F
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * : Mounted on ceramic substrate
)
SYMBOL VCBO VCEO VEBO IC IB PC PC* Tj Tstg RATING 160 160 6 1 0.5 0.5 W 1 150 -55 150
hFE Rank
UNIT
1 2 3
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05
V V V A A
Marking
Lot No.
(250mm2
0.8t)
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain
)
TEST CONDITION VCB=160V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 VCE=5V, IC=200mA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=120mA, IB=2mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCB=10V, IE=0, f=1MHz MIN. 160 160 0.45 TYP. 0.05 0.13 100 15 MAX. 1.0 1.0 320 0.1 1.5 0.75 UNIT A A V V V V V MHz pF
SYMBOL ICBO IEBO V(BR)CEO hFE
(Note)
VCE(sat)(1) Collector-Emitter Saturation Voltage VCE(sat)(2) VCE(sat)(3) Base-Emitter Voltage Transition Frequency Collector Output Capacitance VBE fT Cob
2010. 7. 13
Revision No : 3
G2
J B E
SOT-89
1/3
KTC4380
I C - V CE
1.0 COLLECTOR CURRENT IC (A) 0.8 0.6 0.4 0.2 0
15
I C - V BE
COLLECTOR CURRENT I C (A)
COMMON
10
1.0 0.8 0.6 0.4 0.2 0
C Ta=25 C Ta=0 C
6 4 3 2.5 2 1.5 1 I B =0.5mA 0
COMMON EMITTER VCE =5V
EMITTER Ta=25 C
0
4
8
12
16
20
24
28
0
0.2
0.4
Ta=1 00
0.6
0.8
1.0
1.2
1.4
COLLECTOR-EMITTER VOLTAGE V CE (V)
BASE-EMITTER VOLTAGE V BE (V)
h FE - I C
500 DC CURRENT GAIN h FE
Ta=25 C
h FE - I C
500 300
Ta=100 C Ta=25 C Ta=0 C
DC CURRENT GAIN h FE
300
COMMON EMITTER
10
100 50
100 50
5
V
VC
E
=2
COMMON EMITTER VCE =10V VCE =5V
20
10
30
50
100
300
1k
20
10
30
50
100
300
1k
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
V CE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 0.3
COMMON EMITTER Ta=25 C
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.5 0.3
COMMON EMITTER I C /IB =10
0.5
0.1 0.05 0.03
I C /I B =10 IC /I B =5
0.1 0.05 0.03
Ta=100 C Ta=25 C Ta=0 C
0.01
0.01 5 10 30 100 300 1k COLLECTOR CURRENT I C (mA)
5
10
30
100
300
1k
COLLECTOR CURRENT I C (mA)
2010. 7. 13
Revision No :3
2/3
KTC4380
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
fT - IC
TRANSITION FREQUENCY f T (MHz) 500 300
COMMON EMITTER Ta=25 C VCE =5V VCE =2V
C ob - V CB
100 50 30
COMMON EMITTER f=1MHz Ta=25 C
100 50 30
10 5
10
2
5
10
30
100
400
2
1
3
5
10
30
50
100
200
COLLECTOR CURRENT I C (mA)
COLLECTOR-BASE VOLTAGE V CB (V)
3k COLLECTOR CURRENT I C (mA) 1k 500 300 100 50 30 10 5 3 1
COLLECTOR POWER DISSIPATION PC (W)
SAFE OPERATING AREA
I C MAX(PULSE) I C MAX(CONTINUOUS) *
P C - Ta
1.2 1.0 0.8 0.6 0.4 0.2 0
2 1 1 MOUNTED ON CERAMIC
10 m S
DC
OP
ER
* 10 0m S
SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C
S* 1m
AT
*
IO
N
* SINGLE NONREPETITIVE PULSE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C) 30 100 300
0.3
1
3
10
COLLECTOR-EMITTER VOLTAGE V CE (V)
2010. 7. 13
Revision No : 3
3/3

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